ZXMN6A07Z
60V SOT89 N-channel enhancement mode mosfet
Summary
V (BR)DSS
60
Description
R DS(on) ( )
0.250 @ V GS = 10V
0.350 @ V GS = 4.5V
I D (A)
2.5
2.1
D
This new generation trench MOSFET from Zetex utilizes a unique
structure combining the benefits of low on-state resistance with fast
switching speed.
Features
G
S
?
?
?
Low on-resistance
Fast switching speed
Low threshold
?
SOT89 package
S
Applications
D
D
?
?
?
?
DC-DC converters
Power management functions
Relay and solenoid driving
Motor control
Top view
G
Ordering information
Device
ZXMN6A07ZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity per
reel
1,000
Device marking
7N6
Issue 8 - January 2007
? Zetex Semiconductors plc 2007
1
www.zetex.com
相关PDF资料
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相关代理商/技术参数
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ZXMN6A08E6QTA 制造商:Diodes Incorporated 功能描述:
ZXMN6A08E6TA 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN6A08E6TA-CUT TAPE 制造商:DIODES 功能描述:ZXMN6A08 Series 60 V 0.08 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6
ZXMN6A08E6TC 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube